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Article Details
- Journal Title
- Advances in Condensed Matter Physics
- Volume
- 2015
- Article Title
- Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer
- List of Authors
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- Jingjing Jin
- Yinhui Chen
- Kaizhou Tan
- Jun Luo
- Feng Zhou
- Zongze Chen
- Ye Huang
- Article ID
- 762498
- Article Type
- Research Article
- No. of Pages
- 6 Pages
- Corresponding Author
- Shengdong Hu
- Additional Authors
Invoice Details
- Invoice Issue Date
- 6 May 2024
- Type of Reprints
- Colored, Covered
- Invoice Ref. No.
- Terms
- Payable upon Receipt
Charges
- No. of Copies
- Reprints Charges
- 0.00
- Total
- $