PAYMENT DETAILS

  • Order Details
    1
  • Confirm
    2

Order Details

Are you one of the authors of this manuscript?
No. of Copies
 
(minmum 25 copies)

Billing and Shipping Addresses

Billing Address

Payer Name
Email
Phone
Address
City
Country
Tax/Customs info
(e.g. 'CPF/CNPJ', 'RUT','EORI', or 'NPWP')

Shipping Address

Attention of
Email
Phone
Address
(P.O. Box is not allowed)
City
Country

Note: if you do not confirm your information in step 2, your information will not be saved.

Article Details

Journal Title
Active and Passive Electronic Components
Volume
2023
Article Title
A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node
List of Authors
  • Jiayu Yin
  • Wenli Liao
Article ID
2364341
Article Type
Research Article
No. of Pages
11 Pages
Corresponding Author
Chengying Chen
Additional Authors

Invoice Details

Invoice Issue Date
28 April 2024
Type of Reprints
Colored, Covered
Invoice Ref. No.
Terms
Payable upon Receipt

Charges

No. of Copies
Reprints Charges
0.00
Total
$